IRF044 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE 7.87 (0.310) 6.99 (0.275) 1 20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. .
• HERMETICALLY SEALED TO
–3 METAL PACKAGE
7.87 (0.310) 6.99 (0.275)
1
20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.070) 1.52 (0.060)
11.18 (0.440) 10.67 (0.420)
26.67 (1.050) max.
4.09 (0.161) 3.84 (0.151) dia. 2 plcs.
2
60V 44A 0.028Ω
• SIMPLE DRIVE REQUIREMENTS
• SCREENING OPTIONS AVAILABLE
1.57 (0.062) 1.47 (0.058) dia. 2 plcs.
TO
–3 Metal Package
Pin 1
– Gate Pin 2
– Source Case
– Drain
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS ID ID IDM PD EAS dv/dt TJ , Tstg TL Gate
– Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Po.
·Drain Current ID=44A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.0.
www.DataSheet4U.com PD - 90584 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Prod.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF044SMD |
Seme LAB |
N-CHANNEL POWER MOSFET | |
2 | IRF034 |
International Rectifier |
MOSFET transistor | |
3 | IRF034 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | IRF054 |
International Rectifier |
MOSFET transistor | |
5 | IRF054 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
6 | IRF054SMD |
Seme LAB |
N-CHANNEL POWER MOSFET | |
7 | IRF-24 |
Vishay |
Inductors | |
8 | IRF-46 |
Vishay Siliconix |
Inductors Epoxy Conformal Coated | |
9 | IRF100 |
ETC |
HIGH POWER WIRE WOUND RESISTORS | |
10 | IRF100B201 |
International Rectifier |
Power MOSFET | |
11 | IRF100B201 |
INCHANGE |
N-Channel MOSFET | |
12 | IRF100B202 |
International Rectifier |
Power MOSFET |