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·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power supplies ·Motor controls,Inverters and Choppers ·Audio amplifiers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID .
l Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=1mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=16A
IGSS Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS Zero Gate Voltage Drain Current VDS=48V; VGS=0
VSD Diode Forward Voltage
IS=25A; VGS=0
Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance
VDS=25V; VGS=0V; fT=1MHz
tr Rise Time
td(on)
Turn-on Telay Time
tf Fall Time
ID=25A; VDD=30V; RG=7.5Ω
td(off)
T.
IRF034 - International Rectifier
PD - 90585 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Numb.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF044 |
Seme LAB |
N-CHANNEL POWER MOSFET |
|
| 2 | IRF044 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | IRF044 |
International Rectifier |
MOSFET transistor |
|
| 4 | IRF044SMD |
Seme LAB |
N-CHANNEL POWER MOSFET |
|
| 5 | IRF054 |
International Rectifier |
MOSFET transistor |
|
| 6 | IRF054 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 7 | IRF054SMD |
Seme LAB |
N-CHANNEL POWER MOSFET |
|
| 8 | IRF-24 |
Vishay |
Inductors |
|
| 9 | IRF-46 |
Vishay Siliconix |
Inductors Epoxy Conformal Coated |
|
| 10 | IRF100 |
ETC |
HIGH POWER WIRE WOUND RESISTORS |
|
| 11 | IRF100B201 |
International Rectifier |
Power MOSFET |
|
| 12 | IRF100B201 |
INCHANGE |
N-Channel MOSFET |
|