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CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. 600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation. The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm². Features .
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•IncreasedMOSFETdv/dtruggednessto120V/ns
•IncreasedefficiencyduetobestinclassFOMRDS(on)
*EossandRDS(on)
*Qg
•BestinclassRDS(on)/package
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)
Benefits
•IncreasedeconomiesofscalebyuseinPFCandPWMtopo.
IPW60R060C7 - INCHANGE
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R060C7 IIPW60R060C7 ·FEATURES ·Static drain-source on-resi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPW60R016CM8 |
Infineon |
MOSFET |
|
| 2 | IPW60R017C7 |
Infineon |
MOSFET |
|
| 3 | IPW60R024P7 |
Infineon |
Power Transistor |
|
| 4 | IPW60R037CM8 |
Infineon |
MOSFET |
|
| 5 | IPW60R037P7 |
Infineon |
MOSFET |
|
| 6 | IPW60R040C7 |
Infineon |
MOSFET |
|
| 7 | IPW60R040C7 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IPW60R041C6 |
Infineon Technologies |
MOSFET |
|
| 9 | IPW60R041C6 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IPW60R041P6 |
Infineon |
MOSFET |
|
| 11 | IPW60R041P6 |
INCHANGE |
N-Channel MOSFET |
|
| 12 | IPW60R045CP |
Infineon Technologies AG |
CoolMOS Power Transistor |
|