IPW60R045CP CoolMOS® Power Transistor Features • Worldwide best R ds,on in TO247 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tjmax R DS(on),max Q g,typ 650 0.045 150 V Ω nC PG-TO247-3-1 CoolMOS CP is speci.
• Worldwide best R ds,on in TO247
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary V DS @ Tjmax R DS(on),max Q g,typ 650 0.045 150 V Ω nC
PG-TO247-3-1 CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Type IPW60R045CP
Package PG-TO247-3-1
Ordering Code SP000067149
Marking 6R045
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain curre.
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R045CP IIPW60R045CP ·FEATURES ·Static drain-source on-resis.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPW60R045CPA |
Infineon |
Power Transistor | |
2 | IPW60R040C7 |
Infineon |
MOSFET | |
3 | IPW60R040C7 |
INCHANGE |
N-Channel MOSFET | |
4 | IPW60R041C6 |
Infineon Technologies |
MOSFET | |
5 | IPW60R041C6 |
INCHANGE |
N-Channel MOSFET | |
6 | IPW60R041P6 |
Infineon |
MOSFET | |
7 | IPW60R041P6 |
INCHANGE |
N-Channel MOSFET | |
8 | IPW60R016CM8 |
Infineon |
MOSFET | |
9 | IPW60R017C7 |
Infineon |
MOSFET | |
10 | IPW60R024P7 |
Infineon |
Power Transistor | |
11 | IPW60R037CM8 |
Infineon |
MOSFET | |
12 | IPW60R037P7 |
Infineon |
MOSFET |