IPW60R040C7 - INCHANGE

IPW60R040C7 N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R040C7 IIPW60R040C7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Suitable for hard and soft switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL.

Features

·Static drain-source on-resistance: RDS(on)≤40mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Suitable for hard and soft switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 211 PD Total Dissipation @TC=25℃ 227 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS SYMBOL PAR.