IPW60R060C7 |
Part Number | IPW60R060C7 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R060C7 IIPW60R060C7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤60mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-L... |
Features |
·Static drain-source on-resistance: RDS(on)≤60mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Suitable for hard and soft switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 35 IDM Drain Current-Single Pulsed 135 PD Total Dissipation @TC=25℃ 162 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PAR... |
Document |
IPW60R060C7 Data Sheet
PDF 238.56KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPW60R060C7 |
Infineon |
MOSFET | |
2 | IPW60R016CM8 |
Infineon |
MOSFET | |
3 | IPW60R017C7 |
Infineon |
MOSFET | |
4 | IPW60R024P7 |
Infineon |
Power Transistor | |
5 | IPW60R037CM8 |
Infineon |
MOSFET |