OptiMOS®2 Power-Transistor Features • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronou.
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPP12CN10L G
IPS12CN10L G
IPS12CN10L G IPP12CN10L G
100 V 12 mW 69 A
Package
PG-TO220-3
PG-TO251-3-11
Marking
12CN10L
12CN10L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
.
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanch.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPS12CN10LG |
Infineon |
Power-Transistor | |
2 | IPS1225-40A |
IP Semiconductor |
Silicon Controlled Rectifiers | |
3 | IPS1225-40B |
IP Semiconductor |
Silicon Controlled Rectifiers | |
4 | IPS12N03LBG |
Infineon Technologies |
Power-Transistor | |
5 | IPS101 |
ASIC Advantage |
Power Factor Correction Controller | |
6 | IPS1011 |
International Rectifier |
INTELLIGENT POWER LOW SIDE SWITCH | |
7 | IPS1011PBF |
International Rectifier |
INTELLIGENT POWER LOW SIDE SWITCH | |
8 | IPS1011R |
International Rectifier |
INTELLIGENT POWER LOW SIDE SWITCH | |
9 | IPS1011RPBF |
International Rectifier |
INTELLIGENT POWER LOW SIDE SWITCH | |
10 | IPS1011S |
International Rectifier |
INTELLIGENT POWER LOW SIDE SWITCH | |
11 | IPS1011SPBF |
International Rectifier |
INTELLIGENT POWER LOW SIDE SWITCH | |
12 | IPS101C-D |
ASIC Advantage |
Power Factor Correction Controller |