IPS12CN10L |
Part Number | IPS12CN10L |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | OptiMOS®2 Power-Transistor Features • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating ... |
Features |
• N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPP12CN10L G IPS12CN10L G IPS12CN10L G IPP12CN10L G 100 V 12 mW 69 A Package PG-TO220-3 PG-TO251-3-11 Marking 12CN10L 12CN10L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID ... |
Document |
IPS12CN10L Data Sheet
PDF 554.50KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPS12CN10L |
INCHANGE |
N-Channel MOSFET | |
2 | IPS12CN10LG |
Infineon |
Power-Transistor | |
3 | IPS1225-40A |
IP Semiconductor |
Silicon Controlled Rectifiers | |
4 | IPS1225-40B |
IP Semiconductor |
Silicon Controlled Rectifiers | |
5 | IPS12N03LBG |
Infineon Technologies |
Power-Transistor |