IP Semiconductor Co., Ltd. IPS1225-xxA IPS61225 series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. High current density due to double mesa echnology; SIPOS and Glass passivation technology used has reliable operation up to 125℃ junction temperature. Low Igt parts available. Typical a.
Symbol
Value
Unit
IT(RMS) VDRM / VRRM
VTM
25 1200 ≤ 1.6
A V V
TO-220A
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol Value
RMS on
–state current (Tc = 110℃, 180º conduction half sine wave) Average on
–state current (Tc = 110℃, 180º conduction half sine wave)
IT(RMS) IT(AV)
25 16
Storage Junction Temperature Range Operating Junction Temperature Range
Repetitive Peak Off-state Voltage Rep.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPS1225-40B |
IP Semiconductor |
Silicon Controlled Rectifiers | |
2 | IPS12CN10L |
Infineon |
Power-Transistor | |
3 | IPS12CN10L |
INCHANGE |
N-Channel MOSFET | |
4 | IPS12CN10LG |
Infineon |
Power-Transistor | |
5 | IPS12N03LBG |
Infineon Technologies |
Power-Transistor | |
6 | IPS101 |
ASIC Advantage |
Power Factor Correction Controller | |
7 | IPS1011 |
International Rectifier |
INTELLIGENT POWER LOW SIDE SWITCH | |
8 | IPS1011PBF |
International Rectifier |
INTELLIGENT POWER LOW SIDE SWITCH | |
9 | IPS1011R |
International Rectifier |
INTELLIGENT POWER LOW SIDE SWITCH | |
10 | IPS1011RPBF |
International Rectifier |
INTELLIGENT POWER LOW SIDE SWITCH | |
11 | IPS1011S |
International Rectifier |
INTELLIGENT POWER LOW SIDE SWITCH | |
12 | IPS1011SPBF |
International Rectifier |
INTELLIGENT POWER LOW SIDE SWITCH |