IPS12N03LBG - Infineon Technologies

IPS12N03LBG Power-Transistor

Type IPD12N03LB G IPU12N03LB G IPS12N03LB G IPF12N03LB G OptiMOS®2 Power-Transistor Package Marking • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) www.DataSheet4U.com Product Summary V DS R DS(on),max ID 30 11.6 30 V mΩ A • Superior thermal resistance • 175 °C operating .

Features

DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 30 30 120 64 6 ±20 52 -55 ... 175 55/175/56 mJ kV/µs V W °C Unit A Rev. 1.5 page 1 2006-05-15 IPD12N03LB G IPU12N03LB G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB www.DataSheet4U.com IPS12N03LB G IPF12N03LB G Unit max. Values typ. R thJC R thJA minimal footprint 6 cm2 cooling area5) - - 2.9 75 50 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate volt.