IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 12.4 mW 67 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to J.
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO252) ID
100 V 12.4 mW 67 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB12CN10N G
IPD12CN10N G
IPI12CN10N G
IPP12CN10N G
Package
PG-TO263-3
PG-TO252-3
Marking
12CN10N
12CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parame.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPP12CN10N |
INCHANGE |
N-Channel MOSFET | |
2 | IPP12CN10N |
Infineon |
Power-Transistor | |
3 | IPP12CN10L |
Infineon |
Power-Transistor | |
4 | IPP12CN10L |
INCHANGE |
N-Channel MOSFET | |
5 | IPP12CN10LG |
Infineon |
Power-Transistor | |
6 | IPP12CNE8NG |
Infineon Technologies |
Power-Transistor | |
7 | IPP120N04S3-02 |
Infineon |
Power-Transistor | |
8 | IPP120N04S4-01 |
Infineon |
Power-Transistor | |
9 | IPP120N04S4-02 |
Infineon |
Power-Transistor | |
10 | IPP120N06NG |
Infineon Technologies |
Power-Transistor | |
11 | IPP120N06S4-02 |
Infineon |
Power-Transistor | |
12 | IPP120N06S4-03 |
Infineon |
Power-Transistor |