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IPP12CN10NG |
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| Part Number | IPP12CN10NG |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) P... |
| Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 12.4 mW 67 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Package PG-TO263-3 PG-TO252-3 Marking 12CN10N 12CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parame... |
| Document |
 IPP12CN10NG Data Sheet
PDF 858.83KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPP12CN10N |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IPP12CN10N |
Infineon |
Power-Transistor |
|
| 3 | IPP12CN10L |
Infineon |
Power-Transistor |
|
| 4 | IPP12CN10L |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPP12CN10LG |
Infineon |
Power-Transistor |
|