OptiMOS®2 Power-Transistor Features • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronou.
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPP12CN10L G
IPS12CN10L G
IPS12CN10L G IPP12CN10L G
100 V 12 mW 69 A
Package
PG-TO220-3
PG-TO251-3-11
Marking
12CN10L
12CN10L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
.
isc N-Channel MOSFET Transistor IPP12CN10L,IIPP12CN10L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12mΩ ·En.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPP12CN10LG |
Infineon |
Power-Transistor | |
2 | IPP12CN10N |
INCHANGE |
N-Channel MOSFET | |
3 | IPP12CN10N |
Infineon |
Power-Transistor | |
4 | IPP12CN10NG |
Infineon |
Power-Transistor | |
5 | IPP12CNE8NG |
Infineon Technologies |
Power-Transistor | |
6 | IPP120N04S3-02 |
Infineon |
Power-Transistor | |
7 | IPP120N04S4-01 |
Infineon |
Power-Transistor | |
8 | IPP120N04S4-02 |
Infineon |
Power-Transistor | |
9 | IPP120N06NG |
Infineon Technologies |
Power-Transistor | |
10 | IPP120N06S4-02 |
Infineon |
Power-Transistor | |
11 | IPP120N06S4-03 |
Infineon |
Power-Transistor | |
12 | IPP120N06S4-H1 |
Infineon |
Power-Transistor |