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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP12CN10N，IIPP12CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12.9mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications.
·Static drain-source on-resistance:
RDS(on) ≤12.9mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
67
IDM
Drain Current-Single Pulsed
268
PD
Total Dissipation @TC=25℃
125
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A.
IPP12CN10N - Infineon
IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Exc.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPP12CN10L |
Infineon |
Power-Transistor |
|
| 2 | IPP12CN10L |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPP12CN10LG |
Infineon |
Power-Transistor |
|
| 4 | IPP12CN10NG |
Infineon |
Power-Transistor |
|
| 5 | IPP12CNE8NG |
Infineon Technologies |
Power-Transistor |
|
| 6 | IPP120N04S3-02 |
Infineon |
Power-Transistor |
|
| 7 | IPP120N04S4-01 |
Infineon |
Power-Transistor |
|
| 8 | IPP120N04S4-02 |
Infineon |
Power-Transistor |
|
| 9 | IPP120N06NG |
Infineon Technologies |
Power-Transistor |
|
| 10 | IPP120N06S4-02 |
Infineon |
Power-Transistor |
|
| 11 | IPP120N06S4-03 |
Infineon |
Power-Transistor |
|
| 12 | IPP120N06S4-H1 |
Infineon |
Power-Transistor |
|