IPP12CN10N INCHANGE N-Channel MOSFET Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

IPP12CN10N

INCHANGE
IPP12CN10N
IPP12CN10N IPP12CN10N
zoom Click to view a larger image
Part Number IPP12CN10N
Manufacturer INCHANGE
Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP12CN10N,IIPP12CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12.9mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche te...
Features
·Static drain-source on-resistance: RDS(on) ≤12.9mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 67 IDM Drain Current-Single Pulsed 268 PD Total Dissipation @TC=25℃ 125 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A...

Document Datasheet IPP12CN10N Data Sheet
PDF 241.59KB
Distributor Stock Price Buy

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 IPP12CN10L
Infineon
Power-Transistor Datasheet
2 IPP12CN10L
INCHANGE
N-Channel MOSFET Datasheet
3 IPP12CN10LG
Infineon
Power-Transistor Datasheet
4 IPP12CN10N
Infineon
Power-Transistor Datasheet
5 IPP12CN10NG
Infineon
Power-Transistor Datasheet
More datasheet from INCHANGE



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact