IPP12CN10N |
Part Number | IPP12CN10N |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP12CN10N,IIPP12CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12.9mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche te... |
Features |
·Static drain-source on-resistance: RDS(on) ≤12.9mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 67 IDM Drain Current-Single Pulsed 268 PD Total Dissipation @TC=25℃ 125 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A... |
Document |
IPP12CN10N Data Sheet
PDF 241.59KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPP12CN10L |
Infineon |
Power-Transistor | |
2 | IPP12CN10L |
INCHANGE |
N-Channel MOSFET | |
3 | IPP12CN10LG |
Infineon |
Power-Transistor | |
4 | IPP12CN10N |
Infineon |
Power-Transistor | |
5 | IPP12CN10NG |
Infineon |
Power-Transistor |