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IPP070N06NG |
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| Part Number | IPP070N06NG |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | www.DataSheet4U.com IPB070N06N G IPP070N06N G OptiMOS® Power-Transistor Features • Low gate charge for fast switching applications • N-channel enhancement - normal level • 175 °C operating temperat... |
| Features |
• Low gate charge for fast switching applications • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 6.7 80 V mΩ A Type IPB070N06N G IPP070N06N G Type IPB066N06N G Package IPP066N06N G Marking Package P-TO263-3-2 P-TO263-3-2 070N06N P-TO220-3-1 Marking P-TO220-3-1 066N06N 070N06N 066N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy... |
| Document |
 IPP070N06NG Data Sheet
PDF 481.18KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPP070N06LG |
Infineon Technologies |
Power-Transistor |
|
| 2 | IPP070N08N3 |
Infineon |
Power-Transistor |
|
| 3 | IPP070N08N3 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPP070N08N3G |
Infineon |
Power-Transistor |
|
| 5 | IPP072N10N3 |
INCHANGE |
N-Channel MOSFET |
|