IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 150 V 10.8 mW 83 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen free • Qualified according.
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO263) ID
150 V 10.8 mW 83 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant; Halogen free
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
•Halogen-free according to IEC61249-2-21
Type
IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G
Package Marking
PG-TO263 108N15N
PG-TO220-3 111N15N
PG-TO262-3 111N15N
Maximum ratings, at T j=25 °C, unless otherwise sp.
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11.1mΩ ·Enhancement mode ·Fast S.
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---|---|---|---|---|
1 | IPI111N15N3G |
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2 | IPI110N20N3 |
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3 | IPI110N20N3 |
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8 | IPI100N06S3L-03 |
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9 | IPI100N08N3 |
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10 | IPI100N08N3 |
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