IPI100N04S3-03 - Infineon Technologies

IPI100N04S3-03 OptiMOS-T Power-Transistor

www.DataSheet4U.net IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on) (SMD Version) ID 40 2.5 100 V mΩ A Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Aval.

Features

• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3PN0403 3PN0403 3PN0403 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25°C, V GS=10V1) T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse Gate source volt.