IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOS 3 Power-Transistor TM Product Summary V DS R DS(on),max (TO263) ID 150 10.8 83 V mΩ A Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen free • Qualified accord.
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant; Halogen free
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
•Halogen-free according to IEC61249-2-21 Type IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G
Package Marking
PG-TO263-3 108N15N
PG-TO220-3 111N15N
PG-TO262-3 111N15N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPI111N15N3 |
Infineon |
Power-Transistor | |
2 | IPI111N15N3 |
INCHANGE |
N-Channel MOSFET | |
3 | IPI110N20N3 |
Infineon |
Power-Transistor | |
4 | IPI110N20N3 |
INCHANGE |
N-Channel MOSFET | |
5 | IPI110N20N3G |
Infineon Technologies |
Power Transistor | |
6 | IPI100N04S3-03 |
Infineon Technologies |
OptiMOS-T Power-Transistor | |
7 | IPI100N04S4-H2 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor | |
8 | IPI100N06S3-03 |
Infineon Technologies |
Power-Transistor | |
9 | IPI100N06S3L-03 |
Infineon Technologies |
Power-Transistor | |
10 | IPI100N08N3 |
Infineon |
Power-Transistor | |
11 | IPI100N08N3 |
INCHANGE |
N-Channel MOSFET | |
12 | IPI100N08N3G |
Infineon |
Power-Transistor |