IPI041N12N3G - Infineon Technologies AG

IPI041N12N3G Power-Transistor

IPP041N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant, halogen free • Qualified according to JEDEC1) for target application • Ideal for.

Features

• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant, halogen free
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification IPI041N12N3 G IPB038N12N3 G 120 V 3.8 mW 120 A Type IPB038N12N3 G IPI041N12N3 G IPP041N12N3 G Package Marking PG-TO263-3 038N12N PG-TO262-3 041N12N PG-TO220-3 041N12N Maximum ratings, at T j=25 °C, unless otherwise specified P.