IPI020N06N - Infineon Technologies

IPI020N06N Power Transistor

Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 IPI020N06N Product Summary VDS RDS(on),max ID QOSS QG(0V...

Features

• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21 IPI020N06N Product Summary VDS RDS(on),max ID QOSS QG(0V..10V) 60 V 2.0 mW 120 A 119 nC 106 nC PG-TO262-3 Type IPI020N06N Package PG-TO262-3 Marking 020N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C .