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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB.
·Static drain-source on-resistance:
RDS(on) ≤4.1mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Ideal for high-frequency switching and synchronous rectification
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
120
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
120
A
IDM
Drain Current-Single Pulsed
480
A
PD
Total Dissipation @TC=25℃
300
W
Tj
Max. Operating Junction Temperature
175
℃
Tstg
Storage Tem.
IPI041N12N3 - Infineon
IPP041N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPI041N12N3G |
Infineon Technologies AG |
Power-Transistor |
|
| 2 | IPI040N06N3 |
Infineon |
Power Transistor |
|
| 3 | IPI040N06N3G |
Infineon Technologies AG |
Power-Transistor |
|
| 4 | IPI045N10N3G |
Infineon Technologies |
Power-Transistor |
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| 5 | IPI04CN10N |
Infineon |
Power-Transistor |
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| 6 | IPI04CN10N |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IPI04CN10NG |
Infineon |
Power-Transistor |
|
| 8 | IPI04N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor |
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| 9 | IPI020N06N |
Infineon Technologies |
Power Transistor |
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| 10 | IPI023NE7N3G |
Infineon |
Power-Transistor |
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| 11 | IPI024N06N3 |
Infineon |
Power Transistor |
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| 12 | IPI024N06N3G |
Infineon Technologies |
Power-Transistor |
|