Type OptiMOS™3 Power-Transistor Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • N-channel, normal level • Avalanche rated • Qualified according to JEDEC1) for target applications • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Typ.
• for sync. rectification, drives and dc/dc SMPS
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• N-channel, normal level
• Avalanche rated
• Qualified according to JEDEC1) for target applications
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
IPB037N06N3 G IPI040N06N3 G
IPB037N06N3 G IPI040N06N3 G
Product Summary
IPP040N06N3 G
V DS R DS(on),max (SMD) ID
60 V 3.7 mΩ 90 A
previous engineering sample codes: IPP04xN06N IPI04xN06N IPB04xN06N
IPP040N06N3 G
Package Marking
PG-TO263-3 037N06N
PG-TO262-3 040N06N
PG.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPI040N06N3G |
Infineon Technologies AG |
Power-Transistor | |
2 | IPI041N12N3 |
Infineon |
Power Transistor | |
3 | IPI041N12N3 |
INCHANGE |
N-Channel MOSFET | |
4 | IPI041N12N3G |
Infineon Technologies AG |
Power-Transistor | |
5 | IPI045N10N3G |
Infineon Technologies |
Power-Transistor | |
6 | IPI04CN10N |
Infineon |
Power-Transistor | |
7 | IPI04CN10N |
INCHANGE |
N-Channel MOSFET | |
8 | IPI04CN10NG |
Infineon |
Power-Transistor | |
9 | IPI04N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor | |
10 | IPI020N06N |
Infineon Technologies |
Power Transistor | |
11 | IPI023NE7N3G |
Infineon |
Power-Transistor | |
12 | IPI024N06N3 |
Infineon |
Power Transistor |