isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPI030N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MA.
·Static drain-source on-resistance:
RDS(on) ≤3mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
100
IDM
Drain Current-Single Pulsed
400
PD
Total Dissipation @TC=25℃
300
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W.
IPP030N10N3 G IPI030N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPI030N10N3G |
Infineon Technologies |
Power Transistor | |
2 | IPI032N06N3 |
Infineon |
Power Transistor | |
3 | IPI032N06N3G |
Infineon Technologies |
Power-Transistor | |
4 | IPI034NE7N3G |
Infineon |
Power-Transistor | |
5 | IPI037N06L3 |
Infineon |
Power-Transistor | |
6 | IPI037N06L3G |
Infineon |
Power Transistor | |
7 | IPI037N08N3 |
Infineon |
Power Transistor | |
8 | IPI037N08N3 |
INCHANGE |
N-Channel MOSFET | |
9 | IPI037N08N3G |
Infineon Technologies |
Power-Transistor | |
10 | IPI03N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor | |
11 | IPI020N06N |
Infineon Technologies |
Power Transistor | |
12 | IPI023NE7N3G |
Infineon |
Power-Transistor |