IPI030N10N3G - Infineon Technologies

IPI030N10N3G Power Transistor

IPP030N10N3 G IPI030N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-freq.

Features

• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification Type IPP030N10N3 G IPI030N10N3 G 100 V 3 mW 100 A Package Marking PG-TO220-3 030N10N PG-TO262-3 030N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C2) T C=100 °C Puls.