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IPI020N06N |
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| Part Number | IPI020N06N |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for t... |
| Features |
• Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 IPI020N06N Product Summary VDS RDS(on),max ID QOSS QG(0V..10V) 60 V 2.0 mW 120 A 119 nC 106 nC PG-TO262-3 Type IPI020N06N Package PG-TO262-3 Marking 020N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C ... |
| Document |
 IPI020N06N Data Sheet
PDF 558.24KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPI023NE7N3G |
Infineon |
Power-Transistor |
|
| 2 | IPI024N06N3 |
Infineon |
Power Transistor |
|
| 3 | IPI024N06N3G |
Infineon Technologies |
Power-Transistor |
|
| 4 | IPI029N06N |
Infineon Technologies |
Power Transistor |
|
| 5 | IPI030N10N3 |
INCHANGE |
N-Channel MOSFET |
|