IPG15N06S3L-45 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max5) ID 55 V 2 x 45 mΩ 15 A Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested PG-TDSON-8-4 Type IPG15N06S3L-45 Package PG-TDSON-8-4 M.
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested PG-TDSON-8-4
Type IPG15N06S3L-45
Package PG-TDSON-8-4
Marking 3N03L45
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current one channel active Symbol ID Conditions T C=25 °C, V GS=10 V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 5) Avalanche current, single pulse5) Gate source voltage4) Power dissipation one cha.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPG16N10S4-61 |
Infineon Technologies |
Power-Transistor | |
2 | IPG16N10S4-61A |
Infineon |
Power-Transistor | |
3 | IPG16N10S4L-61A |
Infineon |
Power-Transistor | |
4 | IPG20N04S4-08 |
Infineon |
Power Transistor | |
5 | IPG20N04S4-08A |
Infineon |
Power-Transistor | |
6 | IPG20N04S4-09 |
Infineon |
Power Transistor | |
7 | IPG20N04S4-12 |
Infineon |
Power Transistor | |
8 | IPG20N04S4-12A |
Infineon |
Power-Transistor | |
9 | IPG20N04S4L-07 |
Infineon |
Power Transistor | |
10 | IPG20N04S4L-07A |
Infineon |
Power-Transistor | |
11 | IPG20N04S4L-08 |
Infineon |
Power Transistor | |
12 | IPG20N04S4L-08A |
Infineon |
Power-Transistor |