IPG20N04S4-08 OptiMOS™-T2 Power-Transistor Product Summary V DS R DS(on),max4) ID 40 7.6 20 V mW A Features • Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type IPG20N04S4-08 Package PG-TDSON-8-4 Marki.
• Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type IPG20N04S4-08
Package PG-TDSON-8-4
Marking 4N0408
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current one channel active Symbol Conditions T C=25 °C, V GS=10 V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage Power dissipation one channel a.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPG20N04S4-08A |
Infineon |
Power-Transistor | |
2 | IPG20N04S4-09 |
Infineon |
Power Transistor | |
3 | IPG20N04S4-12 |
Infineon |
Power Transistor | |
4 | IPG20N04S4-12A |
Infineon |
Power-Transistor | |
5 | IPG20N04S4L-07 |
Infineon |
Power Transistor | |
6 | IPG20N04S4L-07A |
Infineon |
Power-Transistor | |
7 | IPG20N04S4L-08 |
Infineon |
Power Transistor | |
8 | IPG20N04S4L-08A |
Infineon |
Power-Transistor | |
9 | IPG20N04S4L-11 |
Infineon |
Power Transistor | |
10 | IPG20N04S4L-11A |
Infineon |
Power-Transistor | |
11 | IPG20N06S2L-35 |
Infineon |
Power Transistor | |
12 | IPG20N06S2L-35A |
Infineon |
Power-Transistor |