IPG16N10S4-61A - Infineon

IPG16N10S4-61A Power-Transistor

IPG16N10S4-61A OptiMOS™-T2 Power-Transistor Features • Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Summary VDS RDS(on),max3) ID 100 V 61 mW 16 A PG-TDSON-8-10 Type IPG16N1.

Features

• Dual N-channel Normal Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• RoHS compliant
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI) Product Summary VDS RDS(on),max3) ID 100 V 61 mW 16 A PG-TDSON-8-10 Type IPG16N10S4-61A Package Marking PG-TDSON-8-10 4N1061 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active ID T C=25 °C, V GS=10 V Pulsed drain current1) one channel active Avalanche energy, single pulse1, 3) Avalan.