IPG15N06S3L-45 |
Part Number | IPG15N06S3L-45 |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | IPG15N06S3L-45 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max5) ID 55 V 2 x 45 mΩ 15 A Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260... |
Features |
• Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested PG-TDSON-8-4 Type IPG15N06S3L-45 Package PG-TDSON-8-4 Marking 3N03L45 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current one channel active Symbol ID Conditions T C=25 °C, V GS=10 V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 5) Avalanche current, single pulse5) Gate source voltage4) Power dissipation one cha... |
Document |
IPG15N06S3L-45 Data Sheet
PDF 160.34KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPG16N10S4-61 |
Infineon Technologies |
Power-Transistor | |
2 | IPG16N10S4-61A |
Infineon |
Power-Transistor | |
3 | IPG16N10S4L-61A |
Infineon |
Power-Transistor | |
4 | IPG20N04S4-08 |
Infineon |
Power Transistor | |
5 | IPG20N04S4-08A |
Infineon |
Power-Transistor |