Type IPD12N03LB G IPU12N03LB G IPS12N03LB G IPF12N03LB G OptiMOS®2 Power-Transistor Package Marking • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) www.DataSheet4U.com Product Summary V DS R DS(on),max ID 30 11.6 30 V mΩ A • Superior thermal resistance • 175 °C operating .
DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 30 30 120 64 6 ±20 52 -55 ... 175 55/175/56 mJ kV/µs V W °C Unit A Rev. 1.5 page 1 2006-05-15 IPD12N03LB G IPU12N03LB G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB www.DataSheet4U.com IPS12N03LB G IPF12N03LB G Unit max. Values typ. R thJC R thJA minimal footprint 6 cm2 cooling area5) - - 2.9 75 50 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate volt.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPF105N03LG |
Infineon |
Power Transistor | |
2 | IPF135N03L |
Infineon |
Power-Transistor | |
3 | IPF135N03LG |
Infineon |
Power-Transistor | |
4 | IPF13N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor | |
5 | IPF009N04NF2S |
Infineon |
MOSFET | |
6 | IPF014N08NF2S |
Infineon |
MOSFET | |
7 | IPF016N06NF2S |
Infineon |
MOSFET | |
8 | IPF017N08NF2S |
Infineon |
MOSFET | |
9 | IPF019N12NM6 |
Infineon |
MOSFET | |
10 | IPF021N13NM6 |
Infineon |
MOSFET | |
11 | IPF04N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor | |
12 | IPF050N03L |
Infineon Technologies |
Fast switching MOSFET |