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isc N-Channel MOSFET Transistor IPD60R600CP,IIPD60R600CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-.
·Static drain-source on-resistance:
RDS(on)≤0.6Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High peak current capability
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
6.1
IDM
Drain Current-Single Pulsed
15
PD
Total Dissipation @TC=25℃
60
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R.
IPD60R600CP - Infineon Technologies
IPD60R600CP CoolMOS® Power Transistor Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge • Extreme dv/.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPD60R600C6 |
Infineon Technologies |
MOSFET |
|
| 2 | IPD60R600C6 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPD60R600CM8 |
Infineon |
MOSFET |
|
| 4 | IPD60R600E6 |
Infineon Technologies |
MOSFET |
|
| 5 | IPD60R600E6 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IPD60R600P6 |
Infineon |
MOSFET |
|
| 7 | IPD60R600P6 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IPD60R600P7 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IPD60R600P7 |
Infineon |
MOSFET |
|
| 10 | IPD60R600P7S |
Infineon |
Power-Transistor |
|
| 11 | IPD60R600P7S |
INCHANGE |
N-Channel MOSFET |
|
| 12 | IPD60R650CE |
Infineon Technologies |
MOSFET |
|