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IPD60R600CP |
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| Part Number | IPD60R600CP |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | IPD60R600CP CoolMOS® Power Transistor Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for tar... |
| Features |
• Lowest figure-of-merit R ON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max @ Tj =25°C Q g,typ 650 0.6 21 V Ω nC PG-TO252 CoolMOS CP is designed for: • Hard switching SMPS topologies Type IPD60R600CP Package PG-TO252 Marking 6R600P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pul... |
| Document |
 IPD60R600CP Data Sheet
PDF 327.57KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD60R600C6 |
Infineon Technologies |
MOSFET |
|
| 2 | IPD60R600C6 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPD60R600CM8 |
Infineon |
MOSFET |
|
| 4 | IPD60R600CP |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPD60R600E6 |
Infineon Technologies |
MOSFET |
|