Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
. . . . . 1 Maximum ratings 3 Thermal characteristics .
•ExtremelylowlossesduetoverylowFOMRdson
*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Gate Pin 1
Source Pin 3
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:Note1:ForMOSFETparallelingtheuseofferritebeadson thegateorseparatetotempolesisgenerallyrecommended. Note2:
*6R650CEisFullPAKmarkingonly
Table1KeyPerfo.
IPD60R650CE - INCHANGE
isc N-Channel MOSFET Transistor IPD60R650CE,IIPD60R650CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.65Ω ·E.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPD60R600C6 |
Infineon Technologies |
MOSFET |
|
| 2 | IPD60R600C6 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPD60R600CM8 |
Infineon |
MOSFET |
|
| 4 | IPD60R600CP |
Infineon Technologies |
Power Transistor |
|
| 5 | IPD60R600CP |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IPD60R600E6 |
Infineon Technologies |
MOSFET |
|
| 7 | IPD60R600E6 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IPD60R600P6 |
Infineon |
MOSFET |
|
| 9 | IPD60R600P6 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IPD60R600P7 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IPD60R600P7 |
Infineon |
MOSFET |
|
| 12 | IPD60R600P7S |
Infineon |
Power-Transistor |
|