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isc N-Channel MOSFET Transistor IPD60R600E6,IIPD60R600E6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage.
·Static drain-source on-resistance:
RDS(on)≤0.6Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
7.3
IDM
Drain Current-Single Pulsed
19
PD
Total Dissipation @TC=25℃
63
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channe.
IPD60R600E6 - Infineon Technologies
CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) prin.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPD60R600C6 |
Infineon Technologies |
MOSFET |
|
| 2 | IPD60R600C6 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPD60R600CM8 |
Infineon |
MOSFET |
|
| 4 | IPD60R600CP |
Infineon Technologies |
Power Transistor |
|
| 5 | IPD60R600CP |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IPD60R600P6 |
Infineon |
MOSFET |
|
| 7 | IPD60R600P6 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IPD60R600P7 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IPD60R600P7 |
Infineon |
MOSFET |
|
| 10 | IPD60R600P7S |
Infineon |
Power-Transistor |
|
| 11 | IPD60R600P7S |
INCHANGE |
N-Channel MOSFET |
|
| 12 | IPD60R650CE |
Infineon Technologies |
MOSFET |
|