IPD50R520CP - Infineon

IPD50R520CP Power Transistor

Type CoolMOSTM Power Transistor Package • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied according to JEDEC1) for target applications Product Summary V DS @Tjmax R DS(on),max Q g,typ IPD50R520CP 550 V 0.520 Ω 13 nC PG-TO252 CoolMOS CP is desig.

Features

ation Operating and storage temperature P tot T C=25 °C T j, T stg Value 7.1 4.5 15 166 0.25 2.5 50 ±20 ±30 66 -55 ... 150 Unit A mJ A V/ns V W °C Rev. 2.1 page 1 2008-04-10 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse T C=25 °C dv /dt IPD50R520CP Value 3.8 15 15 Unit A V/ns Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA Soldering temperature, wavesold.