CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewserie.
•ExtremelylowlossesduetoverylowFOMRdson
*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeappli.
isc N-Channel MOSFET Transistor IPD50R500CE,IIPD50R500CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤500mΩ ·E.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPD50R520CP |
Infineon |
Power Transistor | |
2 | IPD50R520CP |
INCHANGE |
N-Channel MOSFET | |
3 | IPD50R1K4CE |
Infineon |
MOSFET | |
4 | IPD50R1K4CE |
INCHANGE |
N-Channel MOSFET | |
5 | IPD50R280CE |
Infineon |
MOSFET | |
6 | IPD50R280CE |
INCHANGE |
N-Channel MOSFET | |
7 | IPD50R2K0CE |
Infineon |
MOSFET | |
8 | IPD50R2K0CE |
INCHANGE |
N-Channel MOSFET | |
9 | IPD50R380CE |
Infineon |
Power Transistor | |
10 | IPD50R380CE |
INCHANGE |
N-Channel MOSFET | |
11 | IPD50R399CP |
Infineon |
Power Transistor | |
12 | IPD50R399CP |
INCHANGE |
N-Channel MOSFET |