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isc N-Channel MOSFET Transistor IPD50R2K0CE,IIPD50R2K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage .
·Static drain-source on-resistance:
RDS(on)≤2Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
3.6
IDM
Drain Current-Single Pulsed
6.1
PD
Total Dissipation @TC=25℃
33
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel.
IPD50R2K0CE - Infineon
IPD50R2K0CE,IPU50R2K0CE MOSFET 500VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvolta.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPD50R280CE |
Infineon |
MOSFET |
|
| 2 | IPD50R280CE |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPD50R1K4CE |
Infineon |
MOSFET |
|
| 4 | IPD50R1K4CE |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPD50R380CE |
Infineon |
Power Transistor |
|
| 6 | IPD50R380CE |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IPD50R399CP |
Infineon |
Power Transistor |
|
| 8 | IPD50R399CP |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IPD50R3K0CE |
Infineon |
MOSFET |
|
| 10 | IPD50R3K0CE |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IPD50R500CE |
Infineon |
MOSFET |
|
| 12 | IPD50R500CE |
INCHANGE |
N-Channel MOSFET |
|