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isc N-Channel MOSFET Transistor IPD50R399CP,IIPD50R399CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤399mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltag.
·Static drain-source on-resistance:
RDS(on)≤399mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
9
IDM
Drain Current-Single Pulsed
20
PD
Total Dissipation @TC=25℃
83
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel.
IPD50R399CP - Infineon
CoolMOSTM Power Transistor Features • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • Hi.
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|---|---|---|---|---|
| 1 | IPD50R380CE |
Infineon |
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| 2 | IPD50R380CE |
INCHANGE |
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| 3 | IPD50R3K0CE |
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| 4 | IPD50R3K0CE |
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| 5 | IPD50R1K4CE |
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| 6 | IPD50R1K4CE |
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| 7 | IPD50R280CE |
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| 8 | IPD50R280CE |
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| 9 | IPD50R2K0CE |
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| 10 | IPD50R2K0CE |
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| 11 | IPD50R500CE |
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| 12 | IPD50R500CE |
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