Type OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications Type IPD220N06L3 G IPD220N0.
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
Type
IPD220N06L3 G
IPD220N06L3 G
Product Summary V DS R DS(on),max ID
60 V 22 mΩ 30 A
Package Marking
PG-TO-252-3 220N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPD220N06L3 |
INCHANGE |
N-Channel MOSFET | |
2 | IPD220N06L3 |
Infineon |
Power-Transistor | |
3 | IPD22N08S2L-50 |
Infineon Technologies |
Power-Transistor | |
4 | IPD200N15N3 |
Infineon |
Power-Transistor | |
5 | IPD200N15N3 |
INCHANGE |
N-Channel MOSFET | |
6 | IPD200N15N3G |
Infineon Technologies |
Power-Transistor | |
7 | IPD20N03L |
Infineon Technologies AG |
OptiMOS Buck converter series | |
8 | IPD250N06N3G |
Infineon Technologies |
Power-Transistor | |
9 | IPD25CN10N |
Infineon |
Power-Transistor | |
10 | IPD25CN10N |
INCHANGE |
N-Channel MOSFET | |
11 | IPD25CN10NG |
Infineon Technologies |
Power-Transistor | |
12 | IPD25CNE8NG |
Infineon Technologies |
Power-Transistor |