IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 25 mW 35 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JED.
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO252) ID
100 V 25 mW 35 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB26CN10N G
IPD25CN10N G
IPI26CN10N G
IPP26CN10N G
Package
PG-TO263-3
PG-TO252-3
PG-TO262-3
Marking
26CN10N
25CN10N
26CN10N
Maximum ratings, at T j=25 °C, unless otherwise.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPD25CN10N |
Infineon |
Power-Transistor | |
2 | IPD25CN10N |
INCHANGE |
N-Channel MOSFET | |
3 | IPD25CNE8NG |
Infineon Technologies |
Power-Transistor | |
4 | IPD250N06N3G |
Infineon Technologies |
Power-Transistor | |
5 | IPD25N06S2-40 |
Infineon Technologies |
Power-Transistor | |
6 | IPD25N06S4L-30 |
Infineon Technologies |
Power-Transistor | |
7 | IPD200N15N3 |
Infineon |
Power-Transistor | |
8 | IPD200N15N3 |
INCHANGE |
N-Channel MOSFET | |
9 | IPD200N15N3G |
Infineon Technologies |
Power-Transistor | |
10 | IPD20N03L |
Infineon Technologies AG |
OptiMOS Buck converter series | |
11 | IPD220N06L3 |
INCHANGE |
N-Channel MOSFET | |
12 | IPD220N06L3 |
Infineon |
Power-Transistor |