IPD250N06N3G - Infineon Technologies

IPD250N06N3G Power-Transistor

Type OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications Type IPD250N06N3 G Product.

Features

• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications Type IPD250N06N3 G Product Summary V DS R DS(on),max ID IPD250N06N3 G 60 V 25 mΩ 28 A Package Marking PG-TO252-3 250N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Pulsed drain current2) I D,pulse Avalanche energy, single pulse3).