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isc N-Channel MOSFET Transistor IPD220N06L3,IIPD220N06L3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤22mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Sour.
·Static drain-source on-resistance:
RDS(on)≤22mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High frequency switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
30
IDM
Drain Current-Single Pulsed
120
PD
Total Dissipation @TC=25℃
36
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-.
IPD220N06L3 - Infineon
Type OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology .
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|---|---|---|---|---|
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