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IPD053N08N3G |
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| Part Number | IPD053N08N3G |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | IPD053N08N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 80 ... |
| Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 80 5.3 90 • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application previous engineering sample code: IPD06CN08N • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 V mW A Type IPD053N08N3 G Package Marking PG-TO252-3 053N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Cont... |
| Document |
 IPD053N08N3G Data Sheet
PDF 326.90KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD053N08N3 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IPD053N08N3 |
Infineon |
Power-Transistor |
|
| 3 | IPD053N06N |
Infineon |
Power-Transistor |
|
| 4 | IPD053N06N |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPD053N06N3G |
Infineon Technologies |
OptiMOS Power-Transistor |
|