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Features •N-channel,normallevel •FastDiodewithreducedQrr •Optimizedforhardcommutationruggedness •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Paramete.
•N-channel,normallevel
•FastDiodewithreducedQrr
•Optimizedforhardcommutationruggedness
•Verylowon-resistanceRDS(on)
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplication
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 300 V
RDS(on),max
40.7
mΩ
ID 44 A
OptiMOSTMPower-Transistor,300V IPB407N30N
D²PAK
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPB407N30N
Package PG-TO 263-3
Marking 407N30N
RelatedLinks -
1) J-S.
IPB407N30N - INCHANGE
Isc N-Channel MOSFET Transistor IPB407N30N ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charg.
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