Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
. . . . . 1 Maximum ratings . . . ..
•Optimizedforsynchronousrectification
•100%avalanchetested
•Superiorthermalresistance
•N-channel,normallevel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 60
V
RDS(on),max
1.0
mΩ
ID 180 A
Qoss 228 nC
QG(0V..10V)
208
nC
D²-PAK7pin
1 7
tab
Drain Pin 4, tab
Gate Pin 1
Source Pin 2,3,5,6,7
Type/OrderingCode IPB010N06N
Package PG-TO263-7
Marking 010N06N
RelatedLinks -
1) J-STD20 and JESD22 Final Data .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPB011N04L |
Infineon |
Power Transistor |
|
| 2 | IPB011N04LG |
Infineon Technologies |
Power Transistor |
|
| 3 | IPB011N04NF2S |
Infineon |
MOSFET |
|
| 4 | IPB011N04NG |
Infineon Technologies |
OptiMOS3 Power Transistor |
|
| 5 | IPB014N06N |
Infineon Technologies |
Power Transistor |
|
| 6 | IPB015N04L |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IPB015N04L |
Infineon |
Power Transistor |
|
| 8 | IPB015N04LG |
Infineon Technologies |
Power Transistor |
|
| 9 | IPB015N04N |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IPB015N04N |
Infineon |
Power Transistor |
|
| 11 | IPB015N04NG |
Infineon Technologies |
Power Transistor |
|
| 12 | IPB015N06NF2S |
Infineon |
MOSFET |
|