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IPB407N30N |
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| Part Number | IPB407N30N |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | Features •N-channel,normallevel •FastDiodewithreducedQrr •Optimizedforhardcommutationruggedness •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoH... |
| Features |
•N-channel,normallevel •FastDiodewithreducedQrr •Optimizedforhardcommutationruggedness •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 300 V RDS(on),max 40.7 mΩ ID 44 A OptiMOSTMPower-Transistor,300V IPB407N30N D²PAK Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPB407N30N Package PG-TO 263-3 Marking 407N30N RelatedLinks - 1) J-S... |
| Document |
 IPB407N30N Data Sheet
PDF 1.08MB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPB407N30N |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IPB45N04S4L-08 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor |
|
| 3 | IPB45N06S3-16 |
Infineon Technologies |
OptiMOS-T Power-Transistor |
|
| 4 | IPB45N06S3L-13 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor |
|
| 5 | IPB45N06S4-09 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor |
|