IPB45N06S4-09 - Infineon Technologies

IPB45N06S4-09 OptiMOS-T2 Power-Transistor

www.DataSheet.co.kr IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 60 9.2 45 V mΩ A Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type IPB45N06S4-09 IP.

Features

• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested Type IPB45N06S4-09 IPI45N06S4-09 IPP45N06S4-09 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0609 4N0609 4N0609 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage tem.