IPB039N10N3 - Infineon

IPB039N10N3 Power Transistor

OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • High current capability • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 Type IPB039N10N3 G .

Features

• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• High current capability
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21 Type IPB039N10N3 G IPB039N10N3 G Product Summary V DS R DS(on),max ID 100 V 3.9 mΩ 160 A Package Marking PG-TO263-7 039N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C2) T C=100 °C Pulsed drain current2.