Isc N-Channel MOSFET Transistor IPB031N08N5 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDS.
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
80
VGSS ID IDM
Gate-Source Voltage
Drain Current-ContinuousTc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
120 116
480
PD
Total Dissipation @TC=25℃
167
Tch
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL C.
Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylow.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPB031NE7N3 |
INCHANGE |
N-Channel MOSFET | |
2 | IPB031NE7N3 |
Infineon |
Power Transistor | |
3 | IPB031NE7N3G |
Infineon Technologies AG |
Power-Transistor | |
4 | IPB033N10N5LF |
INCHANGE |
N-Channel MOSFET | |
5 | IPB034N03L |
Infineon |
Power-Transistor | |
6 | IPB034N03L |
INCHANGE |
N-Channel MOSFET | |
7 | IPB034N03LG |
Infineon Technologies AG |
OptiMOS3 Power-Transistor | |
8 | IPB034N06L3 |
Infineon |
Power-Transistor | |
9 | IPB034N06L3G |
INCHANGE |
N-Channel MOSFET | |
10 | IPB034N06L3G |
Infineon |
Power Transistor | |
11 | IPB035N08N3 |
Infineon |
Power Transistor | |
12 | IPB035N08N3G |
Infineon Technologies |
Power-Transistor |